Methods and apparatus for improving micro-LED devices
US10403678B2 · kind B2 · utility
2Cited by
2References
19Claims
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Key dates
| Filing date | Oct 4, 2017 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Oct 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/822
Abstract
A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.