3D-capacitor structure
US10403710B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2018 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Oct 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A 3D-capacitor structure that is based on a trench network etched from a top face of a substrate to form an array of separated pillars. The 3D-capacitor structure includes a double capacitor layer stack that extends continuously on top faces of the pillars at the substrate top face, on trench sidewalls and also on a trench bottom. The trench network is modified locally for contacting a second electrode of the double capacitor layer stack while ensuring that no unwanted short-circuit may occur between the second electrode and a third electrode of the double capacitor layer stack. The 3D-capacitor structure provides an improved trade-off between high capacitor density and certainty of no unwanted short-circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.