Nitride semiconductor device including a horizontal switching device
US10403745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2016 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Jun 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A nitride semiconductor device includes a horizontal switching device that includes a substrate, a channel forming layer, a source region, a drain region and a gate region. The source region and the drain region are arranged apart from each other in one direction along a plane of the substrate. The gate region is formed of a p-type semiconductor layer and is arranged between the source region and the drain region. The gate region is divided into multiple parts in a perpendicular direction along the plane of the substrate, the perpendicular direction being perpendicular to an arrangement direction in which the source region and the drain region are arranged. Accordingly, on-resistance is decreased while securing high breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.