Semiconductor devices and methods of manufacturing the same
US10403754B2 · kind B2 · utility
0Cited by
4References
20Claims
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Key dates
| Filing date | May 3, 2018 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | May 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
Abstract
Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.