Thin film transistor unaffected by light and display apparatus having the same
US10409126B2 · kind B2 · utility
1Cited by
10References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 1, 2013 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Jul 6, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136286
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.