Highly heat resistant polysilsesquioxane-based photosensitive resin composition
US10409162B2 · kind B2 · utility
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2References
6Claims
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Key dates
| Filing date | Aug 28, 2015 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Aug 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a highly heat resistant silsesquioxane-based photosensitive resin composition for a liquid crystal display device or an organic EL display device, and a positive resist insulating layer prepared therefrom, and in particular, to a silsesquioxane-based photosensitive resin composition having high heat resistance and a low dielectric property, capable of being used as an insulating layer forming a via hole of the thin film transistor (TFT), and simultaneously, capable of being used as an insulating layer for forming a bank pattern dividing pixels of an organic EL display device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.