Method for quickly establishing lithography process condition by a pre-compensation value
US10409170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2017 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Oct 31, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70641
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses a method for quickly establishing lithography process condition by a pre-compensation value, comprising: firstly determining a reference process condition of masks of which parameters are same, and then determining an optimum process condition of the first mask; thereafter, calculating a ratio of the optimum process condition of the first mask deviating from the reference process condition, wherein if the ratio is equal to or larger than a set threshold, the first mask is inspected, and if the ratio is less than the set threshold, an optimum process condition of the second mask is determined according to the ratio and the reference process condition of the second mask; and by analogy, determining optimum process conditions of the rest masks. The method of the present invention can quickly establish a lithograph process condition, reduce the trial production time for determining the optimum defocus amount and exposure amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.