Cleaning method, method for manufacturing semiconductor device, and plasma treatment device
US10410855B2 · kind B2 · utility
0Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2016 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Apr 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/166
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a cleaning method by which it is possible to prevent deformation of a film formation mask (31). While the film formation mask (31) disposed between a shower head (4) and a susceptor (3) within a chamber (2) is cooled, a cleaning gas made into plasma, which cleaning gas reacts with a reaction product (32) deposited on a surface of the film formation mask (31), is blown on the film formation mask (31).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.