Semiconductor device suitable for electrostatic discharge (ESD) protection
US10411004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Apr 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device and methods for making the devices includes a buried layer of a first conductivity in a substrate in which a distance between two adjacent ends can be selected to achieve a desired breakdown voltage. A deep well having a first doping concentration of a second conductivity type is implanted in an epitaxial layer above the two adjacent ends of the buried layer. A patterned doped region is formed in the deep well and extending into the epitaxial layer above and separated a distance from the two adjacent ends of the buried lay. The patterned doped region has a second doping concentration of the second conductivity type that is greater than the first doping concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.