Semiconductor apparatus, system, and method of producing semiconductor apparatus
US10411058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2017 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Dec 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.