Patent · US Active

Light-emitting device and method for manufacturing the same

US10411065B2 · kind B2 · utility

0Cited by
3References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 13, 2018
Grant dateSep 10, 2019
Priority date
Expiry dateAug 13, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/14

Abstract

A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.