Semiconductor component with protrusion propagation body and corresponding methods of manufacture
US10411124B2 · kind B2 · utility
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5References
18Claims
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Key dates
| Filing date | Feb 19, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Feb 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate, a III-Nitride intermediate stack including the protrusion propagation body situated over the substrate, a transition body over the III-Nitride intermediate stack, a III-Nitride buffer layer situated over the transition body, and a III-Nitride device fabricated over the group III-V buffer layer. The protrusion propagation body includes at least a protrusion generating layer and two or more protrusion spreading multilayers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.