Semiconductor device and method of fabricating the same
US10411131B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Aug 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.