Patent · US Active

Semiconductor electrode, device comprising the same, and a method for fabricating the same

US10411144B2 · kind B2 · utility

0Cited by
1References
9Claims
0Family size

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Key dates

Filing dateMay 15, 2018
Grant dateSep 10, 2019
Priority date
Expiry dateMay 15, 2038

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E60/36
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.