Semiconductor electrode, device comprising the same, and a method for fabricating the same
US10411144B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | May 15, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | May 15, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/36
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.