RAMO4 substrate and nitride semiconductor apparatus
US10411154B2 · kind B2 · utility
1Cited by
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15Claims
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Key dates
| Filing date | May 21, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | May 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An RAMO4 substrate including a single crystal represented by a general formula RAMO4, wherein R represents one or more trivalent elements selected from a group consisting of Sc, In, Y, and lanthanide elements, A represents one or more trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd, in which a main plane of the RAMO4 substrate has an off-angle a tilted θa° with respect to an M-axis direction from a C-plane and 0.05°≤|θa|≤0.8° is satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.