Method of producing optoelectronic semiconductor chips

US10411155B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Lorenzo Zini · Regensburg, DE
• Alexander Frey · Lappersdorf, DE
• Joachim Hertkorn · Neukirchen, DE
• Berthold Hahn · Hemau, DE

Key dates

• Filing date: Jul 23, 2015
• Grant date: Sep 10, 2019
• Expiry date: Jul 27, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.