Light emitting diode and fabrication method thereof
US10411163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Aug 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer. The omnidirectional reflector structure is formed on the second surface of the light-emitting epitaxial laminated layer, including: a transparent dielectric layer on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer and covering side walls of the conductive holes; a second transparent adhesive layer on one side surface of the first transparent adhesive layer distal from the transparent dielectric layer; and a metal reflective layer on one side of the second transparent adhesive layer distal from the first transparent adhesive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.