Invisible-light light emitting diode and fabrication method thereof

US10411165B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Chaoyu WU · Xiamen, CN
• Chun-Yi Wu · New Taipei, TW
• Chun-Kai Huang · Taoyuan, TW
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Jan 12, 2018
• Grant date: Sep 10, 2019
• Expiry date: Jan 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

An invisible-light light-emitting diode includes an N-type ohmic contact semiconductor layer, an N-type current spreading layer, an N—GaAs visible-light absorption layer, an N-type cladding layer, a light-emitting layer, a P-type cladding layer and a P-type ohmic contact semiconductor layer. In the invisible-light light-emitting diode, the absorption layer is GaAs, which can effectively remove all visible light when current density is >1 A/mm2, and essentially all visible light when current density is below 3 A/mm2. This effectively solves the red dot effect of invisible-light light-emitting diodes.