Radiation-emitting optoelectronic device

US10411170B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Sonja Tragl · Augsburg, DE
• Dominik Eisert · Regensberg, DE
• Stefan Lange · Shepperton, GB
• Nils Kaufmann · Regensburg, DE
• Alexander Martin · Regensburg, DE
• Krister Bergenek · Regensburg, DE

Key dates

• Filing date: Apr 29, 2016
• Grant date: Sep 10, 2019
• Expiry date: Apr 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.