Semiconductor light-emitting device and optical-semiconductor-mounting substrate
US10411174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2015 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Mar 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuKα radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2θ of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2θ of more than 24° to 70° is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.