Galvanically isolated amplifiers and related methods
US10411663B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45212
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Galvanically Isolated Amplifier (GIA) includes an isolation barrier to galvanically isolate high voltage circuitry from low voltage circuitry. The high voltage circuitry has at least two voltage supply rails, with the voltage supply rail closest to ground potential at a first potential relative to the ground potential. The low voltage circuitry has at least two voltage supply rails, with the voltage supply rail closest to the ground potential at a second potential, the second potential being smaller than the first potential. A Radio Frequency (RF) carrier is digitally Phase Shift Keying (PSK) modulated for transmission across the isolation barrier. The unmodulated RF carrier could also be transmitted across the isolation barrier. PSK modulation could be applied to the RF carrier based on a test waveform to generate a PSK-modulated test signal for transmission while a voltage transient is applied between the high voltage circuitry and the low voltage circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.