Photosensitive thin film device and biometric information sensing apparatus including the photosensitive thin film device
US10417513B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2016 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Jan 28, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A photosensitive thin film device includes a substrate that is transparent and insulative; a first electrode on the substrate; a circular semiconductor layer on the substrate and surrounding a perimeter of the first electrode; a circular second electrode on the substrate and surrounding a perimeter of the semiconductor layer; an interlayer insulating layer on the semiconductor layer and the first and second electrodes and having a first aperture exposing the first electrode; and a conductive layer including an upper surface light barrier arranged on the interlayer insulating layer and covering an upper surface of the semiconductor layer, and a contact plug extending from the upper surface light barrier and connected to the first electrode via the first aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.