Devices, systems, and methods for light emission and detection using amorphous silicon
US10418238B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | May 14, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12178
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Amorphous silicon devices, systems, and related methods are described herein. An example method for fabricating a thin film with light-emitting or light-detecting capability can include depositing a thin film of amorphous silicon on a wafer such that crystalline defects are distributed throughout the thin film. Additionally, an example photonic device can include a p-doped region and an n-doped region formed on a wafer, and a resonator structure formed on the wafer. The resonator structure can be formed from amorphous silicon and can be arranged between the p-doped and n-doped regions to form a PIN junction. Optionally, the photonic device can be incorporated into a monolithic integrated optical system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.