Ion-implanted thermal barrier
US10418304B2 · kind B2 · utility
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Key dates
| Filing date | Aug 21, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Aug 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.