Structure and method for improving high voltage breakdown reliability of a microelectronic device
US10418320B2 · kind B2 · utility
1Cited by
6References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 11, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Sep 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48463
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A metal plate having a top surface and a side surface is located over a first dielectric layer. A second dielectric layer of a second different material is located over the first metal plate. A dielectric structure of the first material is located over the side surface of the metal plate and over the surface of the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.