Capacitor structure with an extended dielectric layer and method of forming a capacitor structure
US10418438B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Feb 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor structure may include a lower conducting layer (e.g., poly 1 layer) and an upper conducting layer (e.g., overlying poly 2 layer), which define an anode and cathode, and a dielectric layer (e.g., an ONO layer stack) located between the upper conducting layer and the lower conducting layer, wherein a portion of the dielectric layer (e.g., at least the nitride layer of the ONO layer stack) extends beyond a lateral edge of the upper conducting layer. A method forming such capacitor structure may utilize a spacer adjacent the lateral edge of the upper conducting layer and over the first portion of the dielectric layer, performing an etch to remove a first portion of the dielectric layer but protect a second portion located below the spacer and extending laterally beyond an edge of the upper conducting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.