Ion trapping for quantum information processing
US10418443B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2017 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Mar 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/424
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.