Thin film transistor, production method thereof, and electronic apparatus
US10418447B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Mar 29, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Mar 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.