Insulated gate bipolar transistor and preparation method therefor
US10418469B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2016 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Jul 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are an insulated gate bipolar transistor and a preparation method therefor. An auxiliary groove gate, namely a structure of an auxiliary groove, an auxiliary gate layer and the corresponding gate oxide layer, is arranged below an emitting metal electrode between a first common groove and a second common groove so as to provide a carrier pathway when the insulated gate bipolar transistor is turned off, so that not only the turn-off speed of the insulated gate bipolar transistor is increased, but also the reverse-biased safety operation area characteristic of the insulated gate bipolar transistor is improved, thus improving the performance of the insulated gate bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.