Semiconductor device having IGBT portion and diode portion
US10418470B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 6, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Mar 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A semiconductor device according to an embodiment includes a first diode portion including a first trench extending in a first direction, and a first trench electrode; a second diode portion adjacent to the first diode portion in the first direction and includes a second trench extending in the first direction, and a second trench electrode and of which the width in the first direction is greater than the width of the first diode portion in a second direction perpendicular to the first direction; and a first IGBT portion adjacent to the first diode portion in the second direction and is adjacent to the second diode portion in the first direction and includes a third trench extending in the first direction, and a first gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.