Compound semiconductor device and method of fabricating the same
US10418513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Sep 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.