Patent · US Active

Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element

US10418530B2 · kind B2 · utility

2Cited by

2References

9Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Reiner Windisch · Nittendorf, DE
Joerg Sorg · Regensburg, DE
Ralph Wirth · Lappersdorf, DE

Key dates

Filing date	Nov 25, 2015
Grant date	Sep 17, 2019
Priority date	—
Expiry date	Nov 25, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/855
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometers. A method for fabricating an optoelectronic semiconductor chip, a further semiconductor chip, conversion element and luminescent material are specified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.