Method for preparing tungsten sulfide thin film
US10421668B2 · kind B2 · utility
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Key dates
| Filing date | May 25, 2017 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/932
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a tungsten sulfide thin film is provided. The method includes the steps of: applying a one-atom-thick W layer on a silicon substrate; applying a one-atom-thick S layer on the W layer; and applying another one-atom-thick W layer on the S layer, to obtain a thin film that is a single-layer thin film having a W—S—W layered structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.