Power transistors with a resistor coupled to a sense transistor

US10422818B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Tikno Harjono · Cupertino, US
• Vijay Krishnamurthy · Santa Clara, US
• Min Chu · Tainan, TW
• Kuntal Joardar · Chandler, US
• Gary Eugene Daum · Orwigsburg, US
• Subrato Roy · Bengaluru, IN
• Vinayak Hegde · Yellapura, IN
• Ankur Chauhan · Kanchinakote, IN
• Sathish Vallamkonda · Sachse, US
• Md Abidur Rahman · Allen, US
• Eung Jung Kim · Allen, US

Key dates

• Filing date: Dec 30, 2017
• Grant date: Sep 24, 2019
• Expiry date: Dec 30, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K2217/0027
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.