Method for manufacturing semiconductor substrate
US10424514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2016 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Mar 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor substrate according to the present invention includes a hydrogen layer forming step of forming a hydrogen layer on a first substrate formed of single crystal of a first semiconductor material, a bonding step of bonding the first substrate and a temporary substrate, a first separation step of separating the first substrate with the hydrogen layer as a boundary and leaving a separated surface side of the first substrate as a first thin film layer on the temporary substrate, a support layer forming step of forming a support layer formed of a second semiconductor material on the temporary substrate on which the first thin film layer is left, a second separation step of removing the temporary substrate, and a cutting step of cutting a peripheral edge portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.