Tunable electrostatic discharge clamp
US10424579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2017 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Mar 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device for electric discharge protection is disclosed. In one aspect, the semiconductor device includes a substrate having a p-type doping. The semiconductor device includes a first well and a second well having an n-type doping and arranged spaced apart within a surface layer of the substrate, and a third well having a p-type doping and arranged in the surface layer of the substrate between the first well and the second well. The semiconductor device further includes an emitter region and a base contact region having a p-type doping and arranged within a surface layer of the first well, and a collector region having a p-type doping. The collector region is arranged at least partly within a surface layer of the third well and such that it overlaps both of the first well and the second well. An integrated circuit including a semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.