Method of forming a semiconductor device
US10424612B2 · kind B2 · utility
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2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2016 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Jan 11, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4913
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes the steps of providing a first circuit layer including a plurality of first contacts, providing one or more semiconductor devices disposed on a stamp, the one or more semiconductor devices including a plurality of second contacts, bonding the plurality of second contacts to the plurality of first contacts via a pressure applied by the stamp.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.