Solid-state imaging device, manufacturing method of solid-state imaging device, and imaging system
US10424613B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2017 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Jul 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A solid-state imaging device has: a counter dope region of a first conductivity type which is formed so as to surround a drain region of a transfer transistor of the solid-state imaging device and in which impurity concentration of the first conductivity type is lower than that of the drain region; and an isolating region of a second conductivity type which is formed in a deep region below channel regions of a plurality of transistors and in which impurity concentration of the second conductivity type is higher than that of a well region, wherein a depth position of a lower surface of the counter dope region is deeper than a depth position of a lower surface of a buried channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.