Oxide semiconductor transistor
US10424672B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2017 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Feb 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor transistor according to an exemplary embodiment of the present invention includes: a substrate; a first gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and the first gate electrode; an oxide semiconductor layer disposed on the gate insulating layer; an etch stopper layer disposed on the oxide semiconductor layer; and a source electrode and a drain electrode disposed on the oxide semiconductor layer and the etch stopper layer and spaced apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.