Patent · US Active

Semiconductor laser diode

US10424898B2 · kind B2 · utility

1Cited by

1References

17Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Alexander Bachmann · Ismaning, DE
Christian Lauer · Regensburg, DE
Michael Furitsch · Ascha, DE

Key dates

Filing date	Nov 8, 2016
Grant date	Sep 24, 2019
Priority date	—
Expiry date	Nov 8, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/18
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.