Switching regulator slew rate control with S-curve shaping
US10425075B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2018 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Apr 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/166
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Driver circuits with S-shaped gate drive voltage curves for ramp-up and ramp-down of power field effect transistors are presented. In ramp-up, the S-shaped curve rapidly ramps the gate voltage of the power FET to its threshold. This ramp-up is self-terminating. The gate voltage of the power FET is slewed through saturation with a time constant. After a predetermined time, the gate of the power FET is driven to approach the supply voltage level. In ramp-down, the S-shaped curve rapidly ramps the gate voltage of the power FET down to its threshold voltage. This ramp-down is self-terminating. The gate voltage of the power FET is slewed through saturation. The gate-source voltage of the power FET is rapidly ramped down to zero. Such S-shaped curves for the gate drive signal allow the control of the transition times of the gate drive signal to acceptable levels of voltage/current spikes and electromagnetic interference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.