Method for producing trialkylgallium compounds and the use thereof

US10428089B2 · kind B2 · utility

Assignee

• UMICORE AG & CO. KG · DE

Inventors

• Wolf Schorn · Gießen, DE
• Jörg Sundermeyer · Marburg, DE
• Annika Frey · Hanau, DE
• Ralf Karch · Kleinostheim, DE
• Andreas Rivas-Nass · Schriesheim, DE
• Eileen Woerner · Nidderau, DE
• Angelino Doppiu · Seligenstadt, DE

Key dates

• Filing date: Mar 12, 2015
• Grant date: Oct 1, 2019
• Expiry date: Apr 18, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

The invention relates to an improved process for inexpensive and environmentally benign preparation of trialkylgallium compounds of the general formula: R3Ga in high yield and selectivity, where R is alkyl of 1 to 4 carbon atoms. Trialkylgallium is prepared according to the invention via the intermediate stage alkylgallium dichloride (RGaCl2) or dialkylgallium chloride/alkylgallium dichloride mixture (R2GaCl/RGaCl2). The RGaCl2 obtained or the R2GaCl/RGaCl2 mixture also forms part of the subject-matter of the present invention. The novel process of the present invention is notable for improved process management. The process intentionally makes substantial use of inexpensive starting materials and reagents of low environmental impact and so is also useful for the industrial scale.The trialkylgallium compounds obtained are very pure and so are particularly useful as organometallic precursor for metal-organic chemical vapor deposition (MOCVD) or metal-organic vapor phase epitaxy (MOVPE) in semiconductor and microsystem technology.