Chemically-sensitive field effect transistor

US10429342B2 · kind B2 · utility

Inventors

• Paul Hoffman · San Diego, US
• Mitchell Lerner · San Diego, US
• Pieter van Rooyen · Village of La Jolla, US

Key dates

• Filing date: Dec 9, 2015
• Grant date: Oct 1, 2019
• Expiry date: Dec 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/883
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A chemically-sensitive field effect transistor is disclosed herein. The chemically-sensitive field effect transistor comprises a CMOS structure comprising a conductive source and a conductive drain, a channel and an analyte-sensitive dielectric layer. The channel extends from the conductive source to the conductive drain. The channel is composed of a one-dimensional transistor material or a two-dimensional transistor material. The analyte-sensitive dielectric layer is disposed over the channel. An I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring on or near the chemically-sensitive field effect transistor.