Methods and apparatus for reducing power consumption in memory circuitry by controlling precharge duration
US10431269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2015 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | May 16, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2227
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Integrated circuits with volatile random-access memory cells are provided. A memory cell may be coupled to write bit lines and a read bit line. The write bit line may not be coupled to any precharge circuitry. The read bit line may only be precharged during memory access operations. In one suitable arrangement, the read bit line may be precharge immediately after an address decoding operation and before an evaluation phase. In another suitable arrangement, the read bit line may be precharged after an addressing decoding operation and in parallel with the evaluation phase. In either arrangement, a substantial amount of leakage and active power can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.