Magnetoresistive memory device
US10431279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2017 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Dec 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory device includes a memory cell including a magnetic tunnel junction element, a detector to detect a current value writable in units of the memory cell, a current value storage area, and a current controller. The current value storage area stores at least one of a maximum value and a minimum value of the writable current value detected by the detector. The current controller performs at least one control operation of an operation of controlling a write current value of the memory cell based on the maximum value and an operation of controlling a read current value of the memory cell based on the minimum value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.