Resistance change type memory including write control circuit to control write to variable resistance element
US10431303B2 · kind B2 · utility
1Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Nov 30, 2017 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Nov 30, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance change type memory includes a variable resistance element connected between first and second bit lines and a write control circuit including first and second transistors each including a terminal connected to the first bit line. The write control circuit controls write to the variable resistance element. The write control circuit supplies a second voltage to the first bit line with a first pulse width via the second transistor in the ON state after supplying a first voltage to the first bit line via the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.