Semiconductor device and method for manufacturing semiconductor device
US10431516B2 · kind B2 · utility
2Cited by
14References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2017 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Mar 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor chip having a passivation film, a stress relieving layer provided on the passivation film, and a groove formed in a periphery of a surface of the semiconductor chip, the groove being provided inside of an edge of the semiconductor chip, wherein the stress relieving layer is partly disposed in the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.