Method of fabricating thin film transistor, thin film transistor, and display apparatus
US10431668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2017 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Jul 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a method of fabricating a thin film transistor. The method includes forming an active layer having a channel region, a source electrode contact region, and a drain electrode contact region, on a base substrate; forming a first photoresist layer on a side of the active layer distal to the base substrate, the first photoresist layer is formed in a region outside that corresponding to the channel region; forming an insulating material layer on a side of the first photoresist layer distal to the base substrate; forming a first conductive metal material layer on a side of the insulating material layer distal to the first photoresist layer; and removing the first photoresist layer, the insulating material layer, the first conductive metal material layer, in the region outside that corresponding to the channel region by a lift-off method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.