Polysilicon thin film and manufacturing method thereof, TFT and manufacturing method thereof, and display panel
US10431669B2 · kind B2 · utility
0Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2015 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Oct 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.