Preparation methods for semiconductor layer and TFT, TFT and array substrate comprising semiconductor layer
US10431692B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 20, 2016 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | May 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
Abstract
Embodiments of the present disclosure provide preparation methods for a semiconductor layer and a TFT, a TFT and an array substrate. The preparation method for a semiconductor layer includes forming a silicon dioxide film on a substrate; forming sidewalls at two ends of the semiconductor layer to be formed by patterning process; performing amination treatment on the sidewalls so that an aminosiloxane monolayer self-assembly is formed on the surface of the sidewalls; carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on the surface of the substrate with the sidewalls formed to form a carbon nanotube film; removing portions of the carbon nanotube film other than the portion between the sidewalls to form a semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.